| PART |
Description |
Maker |
| KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 29C256 AT29C256-15 AT29C256-70TC AT29C256-90PC AT2 |
256K 32K x 8 5-volt Only CMOS Flash Memory
High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SO -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-PDIP -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125
|
Atmel Corp.
|
| LY61L25616 LY61L25616E LY61L25616GL LY61L25616GV L |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| MAX162 MAX162ACNG MAX162ACWG MAX162AING MAX162AMRG |
Complete High-Speed CMOS, 12-Bit ADC
" Complete High-Speed CMOS, 12- Bit ADC"
JT 3C 3#16 PIN RECP
Complete High-Speed CMOS 12-Bit ADC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP24
16-Bit Ultra-Low-Power Microcontroller, 16kB OTP, 512B RAM, 92 segment LCD 56-SSOP -40 to 85
|
MAXIM - Dallas Semiconductor
http://
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| KM641003CJ-10 |
256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM
|
Samsung Electronics
|
| IS61LV2568-8T IS61LV2568-8K IS61LV2568 IS61LV2568- |
x8 SRAM
256K x 8 HIGH-SPEED CMOS STATIC RAM 256K X 8 STANDARD SRAM, 15 ns, PDSO44
256K x 8 HIGH-SPEED CMOS STATIC RAM 256K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| K6R1004V1D |
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM(3.3V Operating) Row Select Data Sheet
|
Samsung Electronic
|
| IS61LV2568L-10T-TR IS61LV2568L-8TL IS61LV2568L08 |
256K X 8 STANDARD SRAM, 8 ns, PDSO44 LEAD FREE, PLASTIC, TSOP2-44
256K x 8 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
| HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
